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Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors

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ISBN: 3866440219 Year: Pages: VI, 132 p. DOI: 10.5445/KSP/1000004373 Language: ENGLISH
Publisher: KIT Scientific Publishing
Subject: Technology (General)
Added to DOAB on : 2019-07-30 20:02:02
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Abstract

This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.

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2006 (1)