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True-Time-Delay Beamforming für ultrabreitbandige Systeme hoher Leistung

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Book Series: Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik ISSN: 18684696 ISBN: 9783866445222 Year: Volume: 60 Pages: VIII, 176 p. DOI: 10.5445/KSP/1000018294 Language: GERMAN
Publisher: KIT Scientific Publishing
Subject: Technology (General)
Added to DOAB on : 2019-07-30 20:01:59
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In dieser Arbeit werden folgende Punkte, zum Teil erstmalig, untersucht:- Entwicklung eines analytischen Modells zum schnellen Design von Rotman-Linsen- Rotman-Linsen im Zeitbereich bei transienten Eingangssignalen- Leistungsaufteilung innerhalb einer Rotman-Linse- Untersuchung der Rotman-Linse im Frequenzbereich 450 MHz bis 5 GHz- Untersuchung einer Vivaldi-Antenne im Frequenzbereich 450 MHz bis 5 GHz- Systemtheoretische Abschätzung der Funktionalität der Rotman-Linse in einem HPEM-System

Literatur in Österreich 1938-1945, Oberösterreich

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ISBN: 9783205795087 Year: Pages: 482 Seiten DOI: 10.26530/OAPEN_482373 Language: German
Publisher: Böhlau Grant: Austrian Science Fund - PUB 110
Added to DOAB on : 2014-12-04 09:02:26
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Dictionary of a province during the National Socialist era (“Oberdonau”), understood as a regional literary subsystem described in terms of the interaction of authors and literary institutions

Lekcii po russkoj aspektologii. Studienhilfen, Band 7

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Book Series: Slavistische Beitraege ISBN: 9783876906737 Year: Pages: 151 Language: German
Publisher: Peter Lang International Academic Publishing Group
Subject: Linguistics
Added to DOAB on : 2019-01-15 13:31:39
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V osnovu etoj knigi položen kurs lekcij, sostavlennyj avtorami i pročitannyj odnim iz nich v universitete Pariž-Ch (Chanter) v 1990/91 g. i v Mjunchenskom universitete v 1994/94 g. Kniga soderžit posledovatel'noe izloženie sovremennoj aspektologičeskoj teorii v toj ee redakcii, kotoroj priderživajutsja avtory, i sistematizaciju faktov, interpretirovannych v ee ramkach.

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

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Book Series: Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik ISSN: 18684696 ISBN: 9783866446151 Year: Volume: 62 Pages: XI, 230 p. DOI: 10.5445/KSP/1000021579 Language: ENGLISH
Publisher: KIT Scientific Publishing
Subject: Technology (General)
Added to DOAB on : 2019-07-30 20:02:02
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This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Sbornik spravočnych i teoretičeskich materialov. Zabytyj avangard. Rossija - pervaja tret' XX stoletija. Band I

Authors: --- ---
Book Series: Wiener Slawistischer Almanach - Sonderbaende ISBN: 9783631740613 Year: Pages: 335 Language: German
Publisher: Peter Lang International Academic Publishing Group
Added to DOAB on : 2019-01-15 13:32:50
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Neben der Zeitschrift Wiener Slawistischer Almanach erscheinen seit 1980 auch 2-3 Mal jährlich Sonderbände (seither 94 Ausgaben) mit literaturwissenschaftlichem oder linguistischem Schwerpunkt. Die literarische Reihe umfasst Monographien oder Tagungsbeiträge aus allen Bereichen der aktuellen slavischen Literaturwissenschaft und weit darüber hinaus (Medientheorie, Kulturwissenschaft, Literaturkritik).

Die Beiträge oder Monographien erscheinen in der Regel in deutscher, russischer oder endlischer Sprache. Publikationsvorschläge an aage.hansen-loeve@lrz.uni.-muenchen.de

Častnoe neoficial'noe pis'mo i teksty-rassuždenija. Persoenlicher Briefwechsel und Eroerterungen auf Russisch

Authors: --- --- --- --- et al.
Book Series: Slavistische Beitraege ISBN: 9783876906669 Year: Pages: 123 Language: Russian|German
Publisher: Peter Lang International Academic Publishing Group
Subject: Languages and Literatures
Added to DOAB on : 2019-01-15 13:31:40
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The purpose of the present exercise book is to expand the ability to write letters using authentic text examples and to deepen it through a rich exercise system. Special emphasis is placed on the teaching of linguistic variants in order to enrich the expressiveness.&#xD;

Texts and studies on Russian universal grammar 1806 - 1812

Authors: ---
Book Series: Specimina philologiae Slavicae ISBN: 9783876902937 Year: Pages: 311 Language: German
Publisher: Peter Lang International Academic Publishing Group
Added to DOAB on : 2019-01-15 13:31:57
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Die 1972 von den Frankfurter Slavisten Olexa Horbatsch und Gerd Freidhof begründete Reihe Specimina philologiae Slavicae wird heute von Holger Kuße (Dresden), Peter Kosta (Potsdam), Beatrix Kreß (Hildesheim), Franz Schindler (Gießen), Barbara Sonnenhauser (Zürich) und Nadine Thielemann (Wien) herausgeben. In der Reihe erscheinen Monographien, Sammelbände und Lehrbücher zu allen Gebieten der Slavistik, der Sprach-, der Literatur- und der Kulturwissenschaft. In der Sprachwissenschaft erscheinen sowohl sprachhistorische als auch innovative Arbeiten zur Pragmatik und Semantik, zu slavischen Kleinsprachen und zur Diskurslinguistik. In der Literatur- und Kulturwissenschaft gehört zu den besonderen Interessensgebieten die Russische Philosophie.

Keywords

1806 --- 1810 --- 1811 --- 1812 --- Band --- Biedermann --- Char --- grammar --- grammars --- Jakob --- Jazvickij --- Linguistik --- Philologie --- Rižskij --- Russian --- Russland --- Slawistik --- Sprachwissenschaft --- studies --- Teil --- Texts --- Timkovskij --- universal

The CERN Resonant WISP Search (CROWS)

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Book Series: Karlsruher Forschungsberichte aus dem Institut für Hochleistungsimpuls- und Mikrowellentechnik ISSN: 21922764 ISBN: 9783731501992 Year: Volume: 5 Pages: XIV, 183 p. DOI: 10.5445/KSP/1000039767 Language: ENGLISH
Publisher: KIT Scientific Publishing
Subject: Technology (General)
Added to DOAB on : 2019-07-30 20:02:01
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The subject of this work is the design, implementation and first results of the ""CERN Resonant WISP Search"" (CROWS), which probes the existence of Axion Like Particles and Hidden Sector Photons (HSPs) using microwave techniques. By exploiting low loss cavity resonators, multiple layers of electromagnetic shielding and a micro-Hz bandwidth detection scheme, new exclusion limits could be set. For HSPs, sensitivity was improved by a factor of ~7 compared to previous laboratory experiments.

Compounds with Polar Metallic Bonding

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ISBN: 9783039210701 / 9783039210718 Year: Pages: 154 DOI: 10.3390/books978-3-03921-071-8 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Science (General) --- Chemistry (General) --- Inorganic Chemistry
Added to DOAB on : 2019-08-28 11:21:27
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The Special Edition 'Compounds with Polar Metallic Bonding' is a collection of eight original research reports presenting a broad variety of chemical systems, analytical methods, preparative pathways and theoretical descriptions of bonding situations, with the common aim of understanding the complex interplay of conduction electrons in intermetallic compounds that possess different types of dipoles. Coulombic dipoles introduced by electronegativity differences, electric or magnetic dipoles, polarity induced by symmetry reduction—all the possible facets of the term 'polarity'—can be observed in polar intermetallic phases and have their own and, in most cases, unique consequences on the physical and chemical behaviour. Elucidation of the structure–property relationships in compounds with polar metallic bonding is a modern and growing scientific field which combines solid state physics, preparative chemistry, metallurgy, modern analytic methods, crystallography, theoretical calculations of the electronic state and many more disciplines.

Wide Bandgap Semiconductor Based Micro/Nano Devices

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ISBN: 9783038978428 / 9783038978435 Year: Pages: 138 DOI: 10.3390/books978-3-03897-843-5 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-08-28 11:21:27
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While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Keywords

optical band gap --- tungsten trioxide film --- annealing temperature --- electrochromism --- AlGaN/GaN HEMT --- DIBL effect --- channel length modulation --- power amplifier --- W band --- high electron mobility transistors --- high electron mobility transistor (HEMT) --- AlGaN/GaN --- ohmic contact --- regrown contact --- ammonothermal GaN --- power amplifier --- I–V kink effect --- AlGaN/GaN HEMT --- large signal performance --- 4H-SiC --- MESFET --- ultrahigh upper gate height --- power added efficiency --- harsh environment --- space application --- 1T DRAM --- wide-bandgap semiconductor --- high-temperature operation --- TCAD --- amorphous InGaZnO (a-IGZO) --- thin-film transistor (TFT) --- positive gate bias stress (PGBS) --- passivation layer --- characteristic length --- edge termination --- silicon carbide (SiC) --- junction termination extension (JTE) --- breakdown voltage (BV) --- Ku-band --- GaN high electron mobility transistor (HEMT) --- power amplifier --- asymmetric power combining --- amplitude balance --- phase balance --- micron-sized patterned sapphire substrate --- growth of GaN --- sidewall GaN --- flip-chip light-emitting diodes --- distributed Bragg reflector --- light output power --- external quantum efficiency --- threshold voltage (Vth) stability --- gallium nitride (GaN) --- high electron mobility transistors (HEMTs) --- analytical model --- high-temperature operation --- T-anode --- GaN --- buffer layer --- anode field plate (AFP) --- cathode field plate (CFP) --- n/a

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