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Coopération Afrique-Europe en matière de recherche et innovation : Défis mondiaux, réponses bi-régionales

Authors: --- --- ---
ISBN: 9782709926539 DOI: 10.4000/books.irdeditions.27011 Language: French
Publisher: IRD Éditions
Subject: Science (General)
Added to DOAB on : 2019-07-31 11:25:14
License: OpenEdition Licence for Books

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Abstract

Les relations scientifiques et technologiques entre l'Afrique et l'Europe ont une histoire longue, dynamique et parfois en dents de scie, qui traduit une certaine complexité en termes d'intérêts et de stratégies aux niveaux national, régional et international. Ce livre traite de la coopération dans le domaine de la recherche appliquée, en quête de solutions face aux défis sociétaux communs. Ainsi aborde-t-il quatre défis majeurs. Premièrement, fournir un aperçu compréhensible du paysage mondial des politiques de recherche et d'innovation dans lequel le partenariat stratégique Afrique-Europe fonctionne actuellement. Deuxièmement, procéder à une analyse critique des divers réseaux et organisations qui soutiennent, permettent et renforcent la coopération bi-régionale en matière de sciences, technologies et innovation [STI]. Troisièmement, éclairer les résultats et l'impact de certaines initiatives réelles des entreprises opérant dans le domaine de la STI. Quatrièmement, présenter une série de leçons claires susceptibles d'appuyer les futurs efforts de coopération entre l'Afrique et l'Europe en matière de STI.

Nanoelectronic Materials, Devices and Modeling

Authors: ---
ISBN: 9783039212255 9783039212262 Year: Pages: 242 DOI: 10.3390/books978-3-03921-226-2 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-08-28 11:21:27
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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

Keywords

UAV --- vision localization --- hierarchical --- landing --- information integration --- memristor --- synaptic device --- spike-timing-dependent plasticity --- neuromorphic computation --- memristive device --- ZnO films --- conditioned reflex --- quantum dot --- sample grating --- cross-gain modulation --- bistability --- distributed Bragg --- semiconductor optical amplifier --- topological insulator --- field-effect transistor --- nanostructure synthesis --- optoelectronic devices --- topological magnetoelectric effect --- drain-induced barrier lowering (DIBL) --- gate-induced drain leakage (GIDL) --- silicon on insulator (SOI) --- graphene --- supercapacitor --- energy storage --- ionic liquid --- UV irradiation --- luminescent centres --- bismuth ions --- two-photon process --- oscillatory neural networks --- pattern recognition --- higher order synchronization --- thermal coupling --- vanadium dioxide --- band-to-band tunneling --- L-shaped tunnel field-effect-transistor --- double-gate tunnel field-effect-transistor --- corner-effect --- AlGaN/GaN --- high-electron mobility transistor (HEMTs) --- p-GaN --- enhancement-mode --- 2DEG density --- InAlN/GaN heterostructure --- polarization effect --- quantum mechanical --- gallium nitride --- MISHEMT --- dielectric layer --- interface traps --- current collapse --- PECVD --- gate-induced drain leakage (GIDL) --- drain-induced barrier lowering (DIBL) --- recessed channel array transistor (RCAT) --- on-current (Ion) --- off-current (Ioff) --- subthreshold slope (SS) --- threshold voltage (VTH) --- saddle FinFET (S-FinFET) --- potential drop width (PDW) --- shallow trench isolation (STI) --- source/drain (S/D) --- conductivity --- 2D material --- Green’s function --- reflection transmision method --- variational form --- dual-switching transistor --- third harmonic tuning --- low voltage --- high efficiency --- CMOS power amplifier IC --- insulator–metal transition (IMT) --- charge injection --- Mott transition --- conductive atomic force microscopy (cAFM) --- gate field effect --- atomic layer deposition (ALD) --- zinc oxide --- silicon --- ZnO/Si --- electron affinity --- bandgap tuning --- conduction band offset --- heterojunction --- solar cells --- PC1D --- vertical field-effect transistor (VFET) --- back current blocking layer (BCBL) --- gallium nitride (GaN) --- normally off power devices --- n/a

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