Search results: Found 3

Listing 1 - 3 of 3
Sort by
Small Scale Deformation using Advanced Nanoindentation Techniques

Authors: ---
ISBN: 9783038979661 / 9783038979678 Year: Pages: 168 DOI: 10.3390/books978-3-03897-967-8 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General)
Added to DOAB on : 2019-06-26 08:44:06
License:

Loading...
Export citation

Choose an application

Abstract

Small scale mechanical deformations have gained a significant interest over the past few decades, driven by the advances in integrated circuits and microelectromechanical systems. One of the most powerful and versatile characterization methods is the nanoindentation technique. The capabilities of these depth-sensing instruments have been improved considerably. They can perform experiments in vacuum and at high temperatures, such as in-situ SEM and TEM nanoindenters. This allows researchers to visualize mechanical deformations and dislocations motion in real time. Time-dependent behavior of soft materials has also been studied in recent research works. This Special Issue on ""Small Scale Deformation using Advanced Nanoindentation Techniques""; will provide a forum for researchers from the academic and industrial communities to present advances in the field of small scale contact mechanics. Materials of interest include metals, glass, and ceramics. Manuscripts related to deformations of biomaterials and biological related specimens are also welcome. Topics of interest include, but are not limited to:

Processing-Structure-Properties Relationships in Polymers

Author:
ISBN: 9783039218806 / 9783039218813 Year: Pages: 400 DOI: 10.3390/books978-3-03921-881-3 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2020-01-07 09:08:26
License:

Loading...
Export citation

Choose an application

Abstract

This collection of research and review papers is aimed at depicting the state of the art on the possible correlations between processing variables, obtained structure and special properties which this structure induces on the plastic part. The extraordinary capacity of plastics to modify their properties according to a particular structure is evidenced for several transformation processes and for many applications. The final common goal is to take profit of this peculiar capacity of plastics by inducing, through a suitable processing, a specific spatial organization.

Keywords

carbon nanotube --- homogeneous dispersion --- ethylene vinyl acetate --- mechanical performance --- electrical conductivity --- microencapsulation --- melamine polyphosphate --- polyurethane --- composite --- flame retardant --- biodegradable nanofibers --- PLGA --- collagen --- epinephrine --- lidocaine --- polyimide film --- linear coefficient of thermal expansion (CTE) --- copper clad laminate --- structure and properties --- polymorphism --- isotactic polypropylene --- deformation --- phase transitions --- uniaxial compression --- uniaxial tensile deformation --- temperature --- in situ X-ray --- cavitation --- indentation --- Harmonix AFM --- polymer morphology --- mechanical properties --- ultra-high molecular weight polyethylene (UHMWPE) --- microcellular injection molding --- supercritical fluid --- supercritical N2 --- supercritical CO2 --- tissue engineering and regenerative medicine --- bioresorbable polymers --- 3D printing/additive manufacturing --- fused filament fabrication/fused deposition modelling --- degradation --- physicochemical characterization --- polycaprolactone --- layered double hydroxides --- ionic liquids --- PLA --- reactive blending --- biobased films --- graphene --- nanoreinforcement --- curing rate --- epoxy microstructure --- fatigue --- composites --- critical gel --- poly(lactic acid) --- carbon black --- graphite --- polymer blend --- poly(ethylene terephthalate) --- intrinsic viscosity --- polyolefin --- compatibilizer --- isotactic polypropylene --- stress-induced phase transitions --- structural analysis --- X-ray diffraction --- polyoxymethylene (POM) --- octakis[(3-glycidoxypropyl)dimethylsiloxy]octasilsesquioxane (GPOSS) --- composites --- morphology --- mechanical properties --- conductive filler --- orientation --- conductive polymer composites --- foam --- model --- PLLA --- bioresorbable vascular scaffolds --- stretch blow molding --- biaxial elongation --- SAXS --- WAXS --- microfibrillar composites --- crystalline morphology --- crystallinity --- mechanical properties --- crystallisation --- morphology --- nanoparticles --- shear --- flow --- orientation --- poly(?-caprolactone) --- polyvinyl butyral --- hydrophobicity --- contact angle --- polypropylene --- atomic force microscopy --- injection molding --- mold temperature evolution --- polycaprolactone --- ultra-high molecular weight polyethylene --- incremental forming --- SPIF --- XRD --- chain orientation --- temperature sensitive --- gel --- controllable gas permeability --- breathable film --- polymer composite --- processing --- polyamide 6 --- compression molding --- polymorphism --- polyamide 6 --- injection molding --- polymorphism --- humidity --- mechanical properties

Nanoelectronic Materials, Devices and Modeling

Authors: ---
ISBN: 9783039212255 / 9783039212262 Year: Pages: 242 DOI: 10.3390/books978-3-03921-226-2 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-08-28 11:21:27
License:

Loading...
Export citation

Choose an application

Abstract

As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

Keywords

UAV --- vision localization --- hierarchical --- landing --- information integration --- memristor --- synaptic device --- spike-timing-dependent plasticity --- neuromorphic computation --- memristive device --- ZnO films --- conditioned reflex --- quantum dot --- sample grating --- cross-gain modulation --- bistability --- distributed Bragg --- semiconductor optical amplifier --- topological insulator --- field-effect transistor --- nanostructure synthesis --- optoelectronic devices --- topological magnetoelectric effect --- drain-induced barrier lowering (DIBL) --- gate-induced drain leakage (GIDL) --- silicon on insulator (SOI) --- graphene --- supercapacitor --- energy storage --- ionic liquid --- UV irradiation --- luminescent centres --- bismuth ions --- two-photon process --- oscillatory neural networks --- pattern recognition --- higher order synchronization --- thermal coupling --- vanadium dioxide --- band-to-band tunneling --- L-shaped tunnel field-effect-transistor --- double-gate tunnel field-effect-transistor --- corner-effect --- AlGaN/GaN --- high-electron mobility transistor (HEMTs) --- p-GaN --- enhancement-mode --- 2DEG density --- InAlN/GaN heterostructure --- polarization effect --- quantum mechanical --- gallium nitride --- MISHEMT --- dielectric layer --- interface traps --- current collapse --- PECVD --- gate-induced drain leakage (GIDL) --- drain-induced barrier lowering (DIBL) --- recessed channel array transistor (RCAT) --- on-current (Ion) --- off-current (Ioff) --- subthreshold slope (SS) --- threshold voltage (VTH) --- saddle FinFET (S-FinFET) --- potential drop width (PDW) --- shallow trench isolation (STI) --- source/drain (S/D) --- conductivity --- 2D material --- Green’s function --- reflection transmision method --- variational form --- dual-switching transistor --- third harmonic tuning --- low voltage --- high efficiency --- CMOS power amplifier IC --- insulator–metal transition (IMT) --- charge injection --- Mott transition --- conductive atomic force microscopy (cAFM) --- gate field effect --- atomic layer deposition (ALD) --- zinc oxide --- silicon --- ZnO/Si --- electron affinity --- bandgap tuning --- conduction band offset --- heterojunction --- solar cells --- PC1D --- vertical field-effect transistor (VFET) --- back current blocking layer (BCBL) --- gallium nitride (GaN) --- normally off power devices --- n/a

Listing 1 - 3 of 3
Sort by
Narrow your search

Publisher

MDPI - Multidisciplinary Digital Publishing Institute (3)


License

CC by-nc-nd (3)


Language

eng (3)


Year
From To Submit

2019 (3)

-->