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Ceramic Conductors

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ISBN: 9783038979562 / 9783038979579 Year: Pages: 184 DOI: 10.3390/books978-3-03897-957-9 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Science (General) --- Physics (General)
Added to DOAB on : 2019-06-26 08:44:06
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This Special Issue of Crystals contains papers focusing on various properties of conducting ceramics. Multiple aspects of both the research and application of this group of materials have been addressed. Conducting ceramics are the wide group of mostly oxide materials which play crucial roles in various technical applications, especially in the context of the harvesting and storage of energy. Without ion-conducting oxides, such as yttria-stabilized zirconia, doped ceria devices such as solid oxide fuel cells would not exist, not to mention the wide group of other ion conductors which can be applied in batteries or even electrolyzers, besides fuel cells. The works published in this Special Issue tackle experimental results as well as general theoretical trends in the field of ceramic conductors, or electroceramics, as it is often referred to.

New Mineral Species and Their Crystal Structures

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ISBN: 9783038976882 Year: Pages: 204 DOI: 10.3390/books978-3-03897-689-9 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Science (General)
Added to DOAB on : 2019-04-05 11:07:22
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One last comment concerns the fundamental contributions of Fourier analysis to quantum physics: Quantum mechanics and quantum field theory.

Keywords

ariegilatite --- nabimusaite group --- new mineral --- crystal structure --- intercalated hexagonal antiperovskite --- CO3-group --- Raman --- pyrometamorphic rocks --- Hatrurim Complex --- tiberiobardiite --- chalcophyllite group --- copper --- silicate --- sulfate --- Cretaio --- Tuscany --- Italy --- oyonite --- lillianite homologous series --- sulfosalt --- copper --- antimony --- arsenic --- Oyon district --- Lima department --- Peru --- fiemmeite --- new oxalate mineral --- Val di Fiemme --- Trentino --- Italy --- sharyginite --- new mineral --- crystal structure --- Raman spectroscopy --- Bellerberg volcano --- Germany --- kurchatovite --- clinokurchatovite --- crystal structure --- borate --- polymorphism --- polytypism --- structural complexity --- structural combinatorics --- configurational entropy --- least-action principle --- barioferrite --- crystal structure --- single-crystal investigation --- Raman --- Hatrurim Complex --- Rusinovite --- Raman spectroscopy --- pyrometamorphism --- stacking faults --- Shadil-Khokh volcano --- Bellerberg volcano --- aurihydrargyrumite --- Au6Hg5 phase --- gold --- placer --- self-electrorefining --- Ehime --- Japan --- cerromojonite --- selenium --- copper --- lead --- mercury --- bismuth --- sou?ekite --- bournonite group --- El Dragón --- Bolivia --- nöggerathite-(Ce) --- new mineral --- zirconolite --- laachite --- sanidinite --- crystal structure --- alkaline volcanic rock --- Laacher See --- Eifel --- parafiniukite --- apatite supergroup --- hedyphane group --- manganese --- calcium --- phosphorus --- Szklary pegmatite --- Lower Silesia --- Poland --- thermaerogenite --- cuprospinel --- gahnite --- magnesioferrite --- CuAl2O4 --- CuFe2O4 --- copper oxide --- new mineral --- spinel supergroup --- fumarole sublimate --- Tolbachik volcano --- Kamchatka --- verneite --- new mineral --- crystal structure --- Hekla --- Vesuvius --- Eldfell --- aluminofluoride

Nanoelectronic Materials, Devices and Modeling

Authors: ---
ISBN: 9783039212255 / 9783039212262 Year: Pages: 242 DOI: 10.3390/books978-3-03921-226-2 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-08-28 11:21:27
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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

Keywords

UAV --- vision localization --- hierarchical --- landing --- information integration --- memristor --- synaptic device --- spike-timing-dependent plasticity --- neuromorphic computation --- memristive device --- ZnO films --- conditioned reflex --- quantum dot --- sample grating --- cross-gain modulation --- bistability --- distributed Bragg --- semiconductor optical amplifier --- topological insulator --- field-effect transistor --- nanostructure synthesis --- optoelectronic devices --- topological magnetoelectric effect --- drain-induced barrier lowering (DIBL) --- gate-induced drain leakage (GIDL) --- silicon on insulator (SOI) --- graphene --- supercapacitor --- energy storage --- ionic liquid --- UV irradiation --- luminescent centres --- bismuth ions --- two-photon process --- oscillatory neural networks --- pattern recognition --- higher order synchronization --- thermal coupling --- vanadium dioxide --- band-to-band tunneling --- L-shaped tunnel field-effect-transistor --- double-gate tunnel field-effect-transistor --- corner-effect --- AlGaN/GaN --- high-electron mobility transistor (HEMTs) --- p-GaN --- enhancement-mode --- 2DEG density --- InAlN/GaN heterostructure --- polarization effect --- quantum mechanical --- gallium nitride --- MISHEMT --- dielectric layer --- interface traps --- current collapse --- PECVD --- gate-induced drain leakage (GIDL) --- drain-induced barrier lowering (DIBL) --- recessed channel array transistor (RCAT) --- on-current (Ion) --- off-current (Ioff) --- subthreshold slope (SS) --- threshold voltage (VTH) --- saddle FinFET (S-FinFET) --- potential drop width (PDW) --- shallow trench isolation (STI) --- source/drain (S/D) --- conductivity --- 2D material --- Green’s function --- reflection transmision method --- variational form --- dual-switching transistor --- third harmonic tuning --- low voltage --- high efficiency --- CMOS power amplifier IC --- insulator–metal transition (IMT) --- charge injection --- Mott transition --- conductive atomic force microscopy (cAFM) --- gate field effect --- atomic layer deposition (ALD) --- zinc oxide --- silicon --- ZnO/Si --- electron affinity --- bandgap tuning --- conduction band offset --- heterojunction --- solar cells --- PC1D --- vertical field-effect transistor (VFET) --- back current blocking layer (BCBL) --- gallium nitride (GaN) --- normally off power devices --- n/a

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eng (3)


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2019 (3)