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Thermal and Electro-thermal System Simulation

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ISBN: 9783039217366 / 9783039217373 Year: Pages: 222 DOI: 10.3390/books978-3-03921-737-3 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-12-09 11:49:16
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Abstract

With increasing power levels and power densities in electronics systems, thermal issues are becoming more and more critical. The elevated temperatures result in changing electrical system parameters, changing the operation of devices, and sometimes even the destruction of devices. To prevent this, the thermal behavior has to be considered in the design phase. This can be done with thermal end electro-thermal design and simulation tools. This Special Issue of Energies, edited by two well-known experts of the field, Prof. Marta Rencz, Budapest University of Technology and Economics, and by Prof. Lorenzo Codecasa, Politecnico di Milano, collects twelve papers carefully selected for the representation of the latest results in thermal and electro-thermal system simulation. These contributions present a good survey of the latest results in one of the most topical areas in the field of electronics: The thermal and electro-thermal simulation of electronic components and systems. Several papers of this issue are extended versions of papers presented at the THERMINIC 2018 Workshop, held in Stockholm in the fall of 2018. The papers presented here deal with modeling and simulation of state-of-the-art applications that are highly critical from the thermal point of view, and around which there is great research activity in both industry and academia. Contributions covered the thermal simulation of electronic packages, electro-thermal advanced modeling in power electronics, multi-physics modeling and simulation of LEDs, and the characterization of interface materials, among other subjects.

Miniaturized Transistors

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ISBN: 9783039210107 / 9783039210114 Year: Pages: 202 DOI: 10.3390/books978-3-03921-011-4 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:06
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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Keywords

flux calculation --- etching simulation --- process simulation --- topography simulation --- CMOS --- field-effect transistor --- ferroelectrics --- MOS devices --- negative-capacitance --- piezoelectrics --- power consumption --- thin-film transistors (TFTs) --- compact model --- surface potential --- technology computer-aided design (TCAD) --- metal oxide semiconductor field effect transistor (MOSFET) --- topography simulation --- metal gate stack --- level set --- high-k --- fin field effect transistor (FinFET) --- line edge roughness --- metal gate granularity --- nanowire --- non-equilibrium Green’s function --- random discrete dopants --- SiGe --- variability --- band-to-band tunneling (BTBT) --- electrostatic discharge (ESD) --- tunnel field-effect transistor (TFET) --- Silicon-Germanium source/drain (SiGe S/D) --- technology computer aided design (TCAD) --- bulk NMOS devices --- radiation hardened by design (RHBD) --- total ionizing dose (TID) --- Sentaurus TCAD --- layout --- two-dimensional material --- field effect transistor --- indium selenide --- phonon scattering --- mobility --- high-? dielectric --- low-frequency noise --- silicon-on-insulator --- MOSFET --- inversion channel --- buried channel --- subthreshold bias range --- low voltage --- low energy --- theoretical model --- process simulation --- device simulation --- compact models --- process variations --- systematic variations --- statistical variations --- FinFETs --- nanowires --- nanosheets --- semi-floating gate --- synaptic transistor --- neuromorphic system --- spike-timing-dependent plasticity (STDP) --- highly miniaturized transistor structure --- low power consumption --- drain engineered --- tunnel field effect transistor (TFET) --- polarization --- ambipolar --- subthreshold --- ON-state --- doping incorporation --- plasma-aided molecular beam epitaxy (MBE) --- segregation --- silicon nanowire --- n/a

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2019 (2)