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Weiterführende Untersuchungen zur Darstellung und Reaktivität von metalloiden Germaniumclustern

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ISBN: 9783866446601 Year: Pages: III, 195 p. DOI: 10.5445/KSP/1000022484 Language: GERMAN
Publisher: KIT Scientific Publishing
Subject: Chemistry (General)
Added to DOAB on : 2019-07-30 20:02:01
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Ein wesentlicher Aspekt dieser Arbeit ist die Suche nach besseren Donorkomponenten für die, mit Hilfe der Kokondensationstechnik dargestellten, Germaniummonohalogenidlösungen.Des Weiteren befaßt sich die Arbeit mit der Folgechemie von metalloiden Germaniumclustern sowohl in Lösung, als auch in der Gasphase.

Photonic Integration and Photonics-Electronics Convergence on Silicon Platform

Authors: --- --- --- --- et al.
Book Series: Frontiers Research Topics ISSN: 16648714 ISBN: 9782889196937 Year: Pages: 109 DOI: 10.3389/978-2-88919-693-7 Language: English
Publisher: Frontiers Media SA
Subject: General and Civil Engineering --- Materials --- Science (General) --- Physics (General)
Added to DOAB on : 2016-08-16 10:34:25
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Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference devices, such as wavelength filters, are significantly limited by fabrication errors in microfabrication processes. For further performance improvement, therefore, various assisting materials, such as indium-phosphide, silicon-nitride, germanium-tin, are now being imported into silicon photonics by using various heterogeneous integration technologies, such as low-temperature film deposition and wafer/die bonding. These assisting materials and heterogeneous integration technologies would also expand the application field of silicon photonics technology. Fortunately, silicon photonics technology has superior flexibility and robustness for heterogeneous integration. Moreover, along with photonic functions, silicon photonics technology has an ability of integration of electronic functions. In other words, we are on the verge of obtaining an ultimate technology that can integrate all photonic and electronic functions on a single Si chip. This e-Book aims at covering recent developments of the silicon photonic platform and novel functionalities with heterogeneous material integrations on this platform.

Metal Complexes Containing Boron Based Ligands

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ISBN: 9783039215843 9783039215850 Year: Pages: 110 DOI: 10.3390/books978-3-03921-585-0 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Science (General) --- Chemistry (General) --- Inorganic Chemistry
Added to DOAB on : 2019-12-09 11:49:16
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Boron-based compounds have been utilized as ligands within transition metal complexes for many decades. The diversity of such compounds in terms of varying functional groups is truly exceptional. Boron compounds are of high interest due to the great potential to modify the substituents around the boron center and to produce a broad range of structural motifs. The many different ways these compounds can coordinate or interact with transition metal centers is astonishing. Examples of transition metal complexes containing boron-based ligands include scorpionates, cluster-type borane- and carboranes, borates, and phosphine-stabilized borylene ligands. This Special Issue brings together a collection of articles focusing on recent developments in the aforementioned boron-based ligands. The articles reported in this book will provide the reader with an overview of the types of boron-based ligands which are currently being researched in groups around the world.

Coordination Chemistry of Silicon

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ISBN: 9783038976387 Year: Pages: 225 DOI: 10.3390/books978-3-03897-639-4 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Science (General) --- Chemistry (General) --- Inorganic Chemistry
Added to DOAB on : 2019-03-08 11:42:05
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The chemistry of silicon has always been a field of major concern due to its proximity to carbon on the periodic table. From the molecular chemist's viewpoint, one of the most interesting differences between carbon and silicon is their divergent coordination behavior. In fact, silicon is prone to form hyper-coordinate organosilicon complexes, and, as conveyed by reports in the literature, highly sophisticated ligand systems are required to furnish low-coordinate organosilicon complexes. Tremendous progress in experimental, as well as computational, techniques has granted synthetic access to a broad range of coordination numbers for silicon, and the scientific endeavor, which was ongoing for decades, was rewarded with landmark discoveries in the field of organosilicon chemistry. Molecular congeners of silicon(0), as well as silicon oxides, were unveiled, and the prominent group 14 metalloid proved its applicability in homogenous catalysis as a supportive ligand or even as a center of catalytic activity. This book focuses on the most recent advances in the coordination chemistry of silicon with transition metals as well as main group elements, including the stabilization of low-valent silicon species through the coordination of electron donor ligands. Therefore, this book is associated with the development of novel synthetic methodologies, structural elucidations, bonding analysis, and also possible applications in catalysis or chemical transformations using related organosilicon compounds.

Keywords

silanetriols --- disiloxane tetrols --- silsesquioxanes --- condensation --- molecular cage --- platinum --- primary silane --- hydrido complex --- oxidative addition --- ligand-exchange reaction --- X-ray crystallography --- Si–Cl activation --- germylene --- digermene --- digermacyclobutadiene --- palladium --- cluster --- cyclic organopolysilane --- template --- bridging silylene ligand --- isocyanide --- hydrogen bonds --- silicon --- 2-silylpyrrolidines --- stereochemistry --- X-ray crystallography --- Baird’s rule --- computational chemistry --- excited state aromaticity --- Photostability --- dye-sensitized solar cell --- disilanylene polymer --- photoreaction --- surface modification --- TiO2 --- silylene --- germylene --- N-heterocyclic carbene --- oxidative addition --- siloxanes --- host-guest chemistry --- supramolecular chemistry --- main group coordination chemistry --- hydrogen bonding --- adsorption --- bond activation --- bonding analysis --- density functional theory --- distorted coordination --- molecular orbital analysis --- silicon surfaces --- disilene --- functionalization --- ?-electron systems --- silicon --- N-heterocyclic carbenes --- bromosilylenes --- silyliumylidenes --- dehydrobromination --- silicon cluster --- siliconoid --- nanoparticle --- computation --- silicon --- N-heterocyclic carbenes --- silyliumylidenes --- small molecule activation --- mechanistic insights --- organosilicon --- reductant --- N-Heterocyclic tetrylene --- salt-free --- germanium --- germanethione --- germathioacid chloride --- N-heterocyclic carbines --- ?-chloro-?-hydrooligosilane --- titanium --- ruthenium --- dehydrogenative alkoxylation --- cluster --- isomerization --- silicon --- siliconoid --- subvalent compounds --- AIM --- DFT --- intermetallic bond --- 29Si NMR spectroscopy --- X-ray diffraction

Miniaturized Transistors

Authors: ---
ISBN: 9783039210107 9783039210114 Year: Pages: 202 DOI: 10.3390/books978-3-03921-011-4 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:06
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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Keywords

flux calculation --- etching simulation --- process simulation --- topography simulation --- CMOS --- field-effect transistor --- ferroelectrics --- MOS devices --- negative-capacitance --- piezoelectrics --- power consumption --- thin-film transistors (TFTs) --- compact model --- surface potential --- technology computer-aided design (TCAD) --- metal oxide semiconductor field effect transistor (MOSFET) --- topography simulation --- metal gate stack --- level set --- high-k --- fin field effect transistor (FinFET) --- line edge roughness --- metal gate granularity --- nanowire --- non-equilibrium Green’s function --- random discrete dopants --- SiGe --- variability --- band-to-band tunneling (BTBT) --- electrostatic discharge (ESD) --- tunnel field-effect transistor (TFET) --- Silicon-Germanium source/drain (SiGe S/D) --- technology computer aided design (TCAD) --- bulk NMOS devices --- radiation hardened by design (RHBD) --- total ionizing dose (TID) --- Sentaurus TCAD --- layout --- two-dimensional material --- field effect transistor --- indium selenide --- phonon scattering --- mobility --- high-? dielectric --- low-frequency noise --- silicon-on-insulator --- MOSFET --- inversion channel --- buried channel --- subthreshold bias range --- low voltage --- low energy --- theoretical model --- process simulation --- device simulation --- compact models --- process variations --- systematic variations --- statistical variations --- FinFETs --- nanowires --- nanosheets --- semi-floating gate --- synaptic transistor --- neuromorphic system --- spike-timing-dependent plasticity (STDP) --- highly miniaturized transistor structure --- low power consumption --- drain engineered --- tunnel field effect transistor (TFET) --- polarization --- ambipolar --- subthreshold --- ON-state --- doping incorporation --- plasma-aided molecular beam epitaxy (MBE) --- segregation --- silicon nanowire --- n/a

Synthesis and Modification of Nanostructured Thin Films

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ISBN: 9783039284542 9783039284559 Year: Pages: 276 DOI: 10.3390/books978-3-03928-455-9 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2020-04-07 23:07:09
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The Special Issue “Synthesis and Modification of Nanostructured Thin Films” highlights the recent progress in thin film synthesis/modification and characterization. New methods are reviewed for the synthesis and/or modification of thin films based on laser, magnetron, chemical, and other techniques. The obtained thin nanostructures are characterized by complex and complementary techniques. We think that most of proposed methods can be directly applied in production, but some others still need further elaboration for long-term prospective applications in lasers, optics, materials, electronics, informatics, telecommunications, biology, medicine, and probably many other domains. The Guest Editor and the MDPI staff are therefore pleased to offer this Special Issue to interested readers, including graduate and PhD students as well as postdoctoral researchers, but also to the entire community interested in the field of nanomaterials. We share the conviction that this can serve as a useful tool for updating the literature, but also to aid in the conception of new production and/or research programs. There is plenty of room for further dedicated R&D advances based on new instruments and materials under development.

Keywords

AlGaN --- nanopatterned sapphire substrate --- hydride vapor phase epitaxy --- stress --- transmission electron microscopy --- copper nanowires --- CuNWs --- degradation --- encapsulation --- PDMS --- PMMA --- solution-based --- transparent electrode --- photonic crystal fiber --- demultiplexer --- dense wavelength division multiplexing --- lithium niobate --- waveguide --- photonic integrated circuit --- propagation loss --- optical lithography --- chemo-mechanical polishing --- gold thin film --- nonlinear absorption --- nonlinear refraction --- transient absorption --- nanoparticles --- high-order harmonics --- electroluminescence --- nanolaminate --- Al2O3 --- Tm2O3 --- atomic layer deposition --- germanium --- DLC --- doped biomaterials --- pulsed laser deposition --- reactive oxygen species --- apoptosis --- cytotoxicity --- titanium film --- interlayer --- cohesion --- residual stress --- nano-indenter --- nanocrystal --- CdTe --- Cu-doped --- ZnTe --- solar cells --- solution processed --- pulsed laser deposition --- chalcogenide thin films --- Raman spectroscopy --- spectroscopic ellipsometry --- noble metal nanoparticles --- pulsed laser ablation --- surface enhanced Raman spectroscopy --- antiepileptic drugs --- Zn2+ substituted Coll-CaPs biomimetic layers --- MAPLE --- spin coating --- dye-sensitized solar cells --- photovoltaic conversion efficiency --- TiO2 thin films --- pulsed laser deposition --- DLC bio-functionality --- silicon doping --- diffusion barrier --- biocompatibility --- proliferation improvement --- endothelial cells --- ZnO nanofilms --- SHG --- Ga doping --- polarization angle --- Cu2MgxZn1?xSnS4 --- thin films --- photoelectric performance --- sol–gel --- sulfuration treatment --- solar cell --- nanomaterial --- zinc oxide --- barium titanate --- composite --- ethylene vinyl acetate --- elastic modulus --- toughness --- flexural rigidity --- radiopacity --- piezoelectricity --- laser surface texturing --- laser-induced periodic surface structures --- LIPSS --- silicon --- PTFE --- friction --- n/a

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