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Computational Methods of Multi-Physics Problems

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ISBN: 9783039214174 / 9783039214181 Year: Pages: 128 DOI: 10.3390/books978-3-03921-418-1 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-12-09 11:49:15
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This book offers a collection of six papers addressing problems associated with the computational modeling of multi-field problems. Some of the proposed contributions present novel computational techniques, while other topics focus on applying state-of-the-art techniques in order to solve coupled problems in various areas including the prediction of material failure during the lithiation process, which is of major importance in batteries; efficient models for flexoelectricity, which require higher-order continuity; the prediction of composite pipes under thermomechanical conditions; material failure in rock; and computational materials design. The latter exploits nano-scale modeling in order to predict various material properties for two-dimensional materials with applications in, for example, semiconductors. In summary, this book provides a good overview of the computational modeling of different multi-field problems.

Miniaturized Transistors

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ISBN: 9783039210107 / 9783039210114 Year: Pages: 202 DOI: 10.3390/books978-3-03921-011-4 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:06
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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Keywords

flux calculation --- etching simulation --- process simulation --- topography simulation --- CMOS --- field-effect transistor --- ferroelectrics --- MOS devices --- negative-capacitance --- piezoelectrics --- power consumption --- thin-film transistors (TFTs) --- compact model --- surface potential --- technology computer-aided design (TCAD) --- metal oxide semiconductor field effect transistor (MOSFET) --- topography simulation --- metal gate stack --- level set --- high-k --- fin field effect transistor (FinFET) --- line edge roughness --- metal gate granularity --- nanowire --- non-equilibrium Green’s function --- random discrete dopants --- SiGe --- variability --- band-to-band tunneling (BTBT) --- electrostatic discharge (ESD) --- tunnel field-effect transistor (TFET) --- Silicon-Germanium source/drain (SiGe S/D) --- technology computer aided design (TCAD) --- bulk NMOS devices --- radiation hardened by design (RHBD) --- total ionizing dose (TID) --- Sentaurus TCAD --- layout --- two-dimensional material --- field effect transistor --- indium selenide --- phonon scattering --- mobility --- high-? dielectric --- low-frequency noise --- silicon-on-insulator --- MOSFET --- inversion channel --- buried channel --- subthreshold bias range --- low voltage --- low energy --- theoretical model --- process simulation --- device simulation --- compact models --- process variations --- systematic variations --- statistical variations --- FinFETs --- nanowires --- nanosheets --- semi-floating gate --- synaptic transistor --- neuromorphic system --- spike-timing-dependent plasticity (STDP) --- highly miniaturized transistor structure --- low power consumption --- drain engineered --- tunnel field effect transistor (TFET) --- polarization --- ambipolar --- subthreshold --- ON-state --- doping incorporation --- plasma-aided molecular beam epitaxy (MBE) --- segregation --- silicon nanowire --- n/a

MEMS/NEMS Sensors: Fabrication and Application

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ISBN: 9783039216345 / 9783039216352 Year: Pages: 242 DOI: 10.3390/books978-3-03921-635-2 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-12-09 16:10:12
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Due to the ever-expanding applications of micro/nano-electromechanical systems (NEMS/MEMS) as sensors and actuators, interest in their development has rapidly expanded over the past decade. Encompassing various excitation and readout schemes, the MEMS/NEMS devices transduce physical parameter changes, such as temperature, mass or stress, caused by changes in desired measurands, to electrical signals that can be further processed. Some common examples of NEMS/MEMS sensors include pressure sensors, accelerometers, magnetic field sensors, microphones, radiation sensors, and particulate matter sensors. Despite a long history of development, fabrication of novel MEMS/NEMS devices still poses unique challenges due to their requirement for a suspended geometry; and many new fabrication techniques have been proposed to overcome these challenges. However, further development of these techniques is still necessary, as newer materials such as compound semiconductors, and 2-dimensional materials are finding their way in various MEMS/NEMS applications, with more complex structures and potentially smaller dimensions.

Keywords

thermoelectric power sensor --- wideband --- GaAs MMIC --- MEMS --- floating slug --- back cavity --- microwave measurement --- MEMS --- high temperature pressure sensors --- AlGaN/GaN circular HFETs --- GaN diaphragm --- adaptive control --- backstepping approach --- tracking performance --- microgyroscope --- resonant frequency --- resistance parameter --- micro fluidic --- oil detection --- MEMS --- microactuator --- magnetic --- micro-NIR spectrometer --- scanning grating mirror --- deflection position detector --- dual-mass MEMS gyroscope --- frequency tuning --- frequency split --- quadrature modulation signal --- frequency mismatch --- suspended micro hotplate --- single-layer SiO2 --- temperature uniformity --- power consumption --- infrared image --- MEMS (micro-electro-mechanical system) --- inertial switch --- acceleration switch --- threshold accuracy --- squeeze-film damping --- photonic crystal cavity --- photonic crystal nanobeam cavity --- optical sensor --- refractive index sensor --- nanoparticle sensor --- optomechanical sensor --- temperature sensor --- Accelerometer readout --- low noise --- low zero-g offset --- microfluidic --- femtosecond laser --- rapid fabrication --- glass welding --- bonding strength --- accelerometer design --- spring design --- analytical model --- gas sensor --- micropellistor --- microdroplet --- pulse inertia force --- methane --- tetramethylammonium hydroxide (TMAH) --- wet etching --- silicon --- 3D simulation --- level-set method --- single crystal silicon --- anisotropy --- vibrating ring gyroscope --- frequency split --- accelerometer --- tunnel magnetoresistive effect --- electrostatic force feedback --- n/a

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MDPI - Multidisciplinary Digital Publishing Institute (3)


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eng (3)


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2019 (3)