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Experimental Investigations of Deformation Pathways in Nanowires

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Book Series: Schriftenreihe des Instituts für Angewandte Materialien, Karlsruher Institut für Technologie ISSN: 21929963 ISBN: 9783866449053 Year: Volume: 8 Pages: VIII, 202 p. DOI: 10.5445/KSP/1000029369 Language: ENGLISH
Publisher: KIT Scientific Publishing
Subject: Technology (General)
Added to DOAB on : 2019-07-30 20:01:57
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This work deals with the experimental investigation of the mechanical properties of nanowires. Experiments are conducted in a dedicated system inside the electron microscope. The mechanical response of various material systems is probed, the underlying deformation mechanisms are elucidated and subsequently put into context with mechanical size effects.

Silicon-Based Nanomaterials: Technology and Applications

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ISBN: 9783039210428 / 9783039210435 Year: Pages: 94 DOI: 10.3390/books978-3-03921-043-5 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:06
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Silicon has been proven to be remarkably resilient as a commercial electronic material. The microelectronics industry has harnessed nanotechnology to continually push the performance limits of silicon devices and integrated circuits. Rather than shrinking its market share, silicon is displacing “competitor” semiconductors in domains such as high-frequency electronics and integrated photonics. There are strong business drivers underlying these trends; however, an important contribution is also being made by research groups worldwide, who are developing new configurations, designs, and applications of silicon-based nanoscale and nanostructured materials. This Special Issue features a selection of papers which illustrate recent advances in the preparation of chemically or physically engineered silicon-based nanostructures and their application in electronic, photonic, and mechanical systems.

Flexible and Stretchable Electronics

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ISBN: 9783038424369 9783038424376 Year: Pages: VIII, 172 DOI: 10.3390/books978-3-03842-437-6 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General)
Added to DOAB on : 2017-06-27 09:51:34
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Flexible and stretchable electronics are receiving tremendous attention as future electronics due to their flexibility and light weight, especially as applications in wearable electronics. Flexible electronics are usually fabricated on heat sensitive flexible substrates such as plastic, fabric or even paper, while stretchable electronics are usually fabricated from an elastomeric substrate to survive large deformation in their practical application. Therefore, successful fabrication of flexible electronics needs low temperature processable novel materials and a particular processing development because traditional materials and processes are not compatible with flexible/stretchable electronics. Huge technical challenges and opportunities surround these dramatic changes from the perspective of new material design and processing, new fabrication techniques, large deformation mechanics, new application development and so on. Here, we invited talented researchers to join us in this new vital field that holds the potential to reshape our future life, by contributing their words of wisdom from their particular perspective.

Miniaturized Transistors

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ISBN: 9783039210107 / 9783039210114 Year: Pages: 202 DOI: 10.3390/books978-3-03921-011-4 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:06
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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Keywords

flux calculation --- etching simulation --- process simulation --- topography simulation --- CMOS --- field-effect transistor --- ferroelectrics --- MOS devices --- negative-capacitance --- piezoelectrics --- power consumption --- thin-film transistors (TFTs) --- compact model --- surface potential --- technology computer-aided design (TCAD) --- metal oxide semiconductor field effect transistor (MOSFET) --- topography simulation --- metal gate stack --- level set --- high-k --- fin field effect transistor (FinFET) --- line edge roughness --- metal gate granularity --- nanowire --- non-equilibrium Green’s function --- random discrete dopants --- SiGe --- variability --- band-to-band tunneling (BTBT) --- electrostatic discharge (ESD) --- tunnel field-effect transistor (TFET) --- Silicon-Germanium source/drain (SiGe S/D) --- technology computer aided design (TCAD) --- bulk NMOS devices --- radiation hardened by design (RHBD) --- total ionizing dose (TID) --- Sentaurus TCAD --- layout --- two-dimensional material --- field effect transistor --- indium selenide --- phonon scattering --- mobility --- high-? dielectric --- low-frequency noise --- silicon-on-insulator --- MOSFET --- inversion channel --- buried channel --- subthreshold bias range --- low voltage --- low energy --- theoretical model --- process simulation --- device simulation --- compact models --- process variations --- systematic variations --- statistical variations --- FinFETs --- nanowires --- nanosheets --- semi-floating gate --- synaptic transistor --- neuromorphic system --- spike-timing-dependent plasticity (STDP) --- highly miniaturized transistor structure --- low power consumption --- drain engineered --- tunnel field effect transistor (TFET) --- polarization --- ambipolar --- subthreshold --- ON-state --- doping incorporation --- plasma-aided molecular beam epitaxy (MBE) --- segregation --- silicon nanowire --- n/a

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