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Nanostructure Based Sensors for Gas Sensing: from Devices to Systems

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ISBN: 9783039216369 / 9783039216376 Year: Pages: 86 DOI: 10.3390/books978-3-03921-637-6 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-12-09 16:10:12
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The development of solid state gas sensors based on microtransducers and nanostructured sensing materials is the key point in the design of portable measurement systems able to reach sensing and identification performance comparable with analytical ones. In such a context several efforts must be spent of course in the development of the sensing material, but also in the choice of the transducer mechanism and its structure, in the electrical characterization of the performance and in the design of suitable measurement setups. This call for papers invites researchers worldwide to report about their novel results on the most recent advances and overview in design and measurements for applications in gas sensors, along with their relevant features and technological aspects. Original research papers are welcome (but not limited) on all aspects that focus on the most recent advances in: (i) basic principles and modeling of gas and VOCs sensors; (ii) new gas sensor principles and technologies; (iii) Characterization and measurements methodologies; (iv) transduction and sampling systems; (vi) package optimization; (vi) gas sensor based systems and applications.

Thin Film Transistor

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ISBN: 9783039215263 / 9783039215270 Year: Pages: 108 DOI: 10.3390/books978-3-03921-527-0 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-12-09 16:10:12
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Recently, new wide-band energy gap semiconductors can be grown by ALD, PLD, sputtering, or MOCVD. They have great potential for the fabrication and application to TFTs. Inorganic semiconductors have good stability against environmental degradation over their organic counterparts, whereas organic materials are usually flexible, transparent, and when solution-processed at low temperatures, are prone to degradation when exposed to heat, moisture, and oxygen. For this Special Issue, we invited researchers to submit papers discussing the development of new functional and smart materials, and inorganic as well as organic semiconductor materials, such as ZnO, InZnO, GaO, AlGaO, AnGaO, AlN/GaN, conducting polymers, molecular semiconductors, perovskite-based materials, carbon nanotubes, carbon nanotubes/polymer composites, and 2D materials (e.g., graphene, MoS2) and their potential applications in display drivers, radio frequency identification tags, e-paper, gas, chemical and biosensors, to name but a few.

Miniaturized Transistors

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ISBN: 9783039210107 / 9783039210114 Year: Pages: 202 DOI: 10.3390/books978-3-03921-011-4 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:06
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What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Keywords

flux calculation --- etching simulation --- process simulation --- topography simulation --- CMOS --- field-effect transistor --- ferroelectrics --- MOS devices --- negative-capacitance --- piezoelectrics --- power consumption --- thin-film transistors (TFTs) --- compact model --- surface potential --- technology computer-aided design (TCAD) --- metal oxide semiconductor field effect transistor (MOSFET) --- topography simulation --- metal gate stack --- level set --- high-k --- fin field effect transistor (FinFET) --- line edge roughness --- metal gate granularity --- nanowire --- non-equilibrium Green’s function --- random discrete dopants --- SiGe --- variability --- band-to-band tunneling (BTBT) --- electrostatic discharge (ESD) --- tunnel field-effect transistor (TFET) --- Silicon-Germanium source/drain (SiGe S/D) --- technology computer aided design (TCAD) --- bulk NMOS devices --- radiation hardened by design (RHBD) --- total ionizing dose (TID) --- Sentaurus TCAD --- layout --- two-dimensional material --- field effect transistor --- indium selenide --- phonon scattering --- mobility --- high-? dielectric --- low-frequency noise --- silicon-on-insulator --- MOSFET --- inversion channel --- buried channel --- subthreshold bias range --- low voltage --- low energy --- theoretical model --- process simulation --- device simulation --- compact models --- process variations --- systematic variations --- statistical variations --- FinFETs --- nanowires --- nanosheets --- semi-floating gate --- synaptic transistor --- neuromorphic system --- spike-timing-dependent plasticity (STDP) --- highly miniaturized transistor structure --- low power consumption --- drain engineered --- tunnel field effect transistor (TFET) --- polarization --- ambipolar --- subthreshold --- ON-state --- doping incorporation --- plasma-aided molecular beam epitaxy (MBE) --- segregation --- silicon nanowire --- n/a

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eng (3)


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2019 (3)