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Nanostructured materials exploit physical phenomena and mechanisms that cannot be derived by simply scaling down the associated bulk structures and phenomena; furthermore, new quantum effects come into play in nanosystems. The exploitation of these emerging nanoscale interactions prompts the innovative design of nanomaterials. Understanding the behavior of materials on all length scales—from the nanostructure up to the macroscopic response—is a critical challenge for materials science. Modern analytical technologies based on synchrotron radiation (SR) allow for the non-destructive investigation of the chemical, electronic, and magnetic structure of materials in any environment. SR facilities have developed revolutionary new ideas and experimental setups for characterizing nanomaterials, involving spectroscopy, diffraction, scatterings, microscopy, tomography, and all kinds of highly sophisticated combinations of such investigation techniques. This book is a collection of contributions addressing several aspects of synchrotron radiation as applied to the investigation of chemical, electronic, and magnetic structure of nanostructured materials. The results reported here provide not only an interesting and multidisciplinary overview of the chemicophysical investigations of nanostructured materials carried out by state-of-the-art SR-induced techniques, but also an exciting glance into the future perspectives of nanomaterial characterization methods.

synchrotron radiation induced spectroscopies --- XPS --- NEXAFS --- nanostructures --- titanium alloy --- self-assembling peptides --- bioactive materials --- room temperature ionic liquids --- in situ X-ray photoelectron spectroscopy --- binding energies --- cyclic voltammetry --- electrochemical impedance spectroscopy --- micro-mesoporous carbon electrode --- supercapacitor materials --- thin films --- multilayers --- thermal conductivity --- thermal expansion --- laser heating --- synchrotron pump-probe powder scattering --- nuclear forward scattering --- metallic glasses --- magnetic annealing --- synchrotron radiation --- crystallization kinetics --- Ge(001)-2

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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

UAV --- vision localization --- hierarchical --- landing --- information integration --- memristor --- synaptic device --- spike-timing-dependent plasticity --- neuromorphic computation --- memristive device --- ZnO films --- conditioned reflex --- quantum dot --- sample grating --- cross-gain modulation --- bistability --- distributed Bragg --- semiconductor optical amplifier --- topological insulator --- field-effect transistor --- nanostructure synthesis --- optoelectronic devices --- topological magnetoelectric effect --- drain-induced barrier lowering (DIBL) --- gate-induced drain leakage (GIDL) --- silicon on insulator (SOI) --- graphene --- supercapacitor --- energy storage --- ionic liquid --- UV irradiation --- luminescent centres --- bismuth ions --- two-photon process --- oscillatory neural networks --- pattern recognition --- higher order synchronization --- thermal coupling --- vanadium dioxide --- band-to-band tunneling --- L-shaped tunnel field-effect-transistor --- double-gate tunnel field-effect-transistor --- corner-effect --- AlGaN/GaN --- high-electron mobility transistor (HEMTs) --- p-GaN --- enhancement-mode --- 2DEG density --- InAlN/GaN heterostructure --- polarization effect --- quantum mechanical --- gallium nitride --- MISHEMT --- dielectric layer --- interface traps --- current collapse --- PECVD --- gate-induced drain leakage (GIDL) --- drain-induced barrier lowering (DIBL) --- recessed channel array transistor (RCAT) --- on-current (Ion) --- off-current (Ioff) --- subthreshold slope (SS) --- threshold voltage (VTH) --- saddle FinFET (S-FinFET) --- potential drop width (PDW) --- shallow trench isolation (STI) --- source/drain (S/D) --- conductivity --- 2D material --- Green’s function --- reflection transmision method --- variational form --- dual-switching transistor --- third harmonic tuning --- low voltage --- high efficiency --- CMOS power amplifier IC --- insulator–metal transition (IMT) --- charge injection --- Mott transition --- conductive atomic force microscopy (cAFM) --- gate field effect --- atomic layer deposition (ALD) --- zinc oxide --- silicon --- ZnO/Si --- electron affinity --- bandgap tuning --- conduction band offset --- heterojunction --- solar cells --- PC1D --- vertical field-effect transistor (VFET) --- back current blocking layer (BCBL) --- gallium nitride (GaN) --- normally off power devices --- n/a