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Computational Methods for Fracture

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ISBN: 9783039216864 9783039216871 Year: Pages: 404 DOI: 10.3390/books978-3-03921-687-1 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Computer Science
Added to DOAB on : 2019-12-09 11:49:16
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Abstract

This book offers a collection of 17 scientific papers about the computational modeling of fracture. Some of the manuscripts propose new computational methods and/or how to improve existing cutting edge methods for fracture. These contributions can be classified into two categories: 1. Methods which treat the crack as strong discontinuity such as peridynamics, scaled boundary elements or specific versions of the smoothed finite element methods applied to fracture and 2. Continuous approaches to fracture based on, for instance, phase field models or continuum damage mechanics. On the other hand, the book also offers a wide range of applications where state-of-the-art techniques are employed to solve challenging engineering problems such as fractures in rock, glass, concrete. Also, larger systems such as fracture in subway stations due to fire, arch dams, or concrete decks are studied.

Keywords

plate --- FSDT --- HSDT --- Mindlin --- incompatible approximation --- fracture --- screened-Poisson model --- gradient-enhanced model --- damage-plasticity model --- implicit gradient-enhancement --- rock --- shear failure --- elastoplastic behavior --- extended scaled boundary finite element method (X-SBFEM) --- stress intensity factors --- fracture process zone (FPZ) --- thermomechanical analysis --- moderate fire --- finite element simulations --- metallic glass matrix composite --- finite element analysis --- shear band --- microstructure --- ductility --- peridynamics --- fatigue --- rolling contact --- damage --- rail squats --- cracks --- steel reinforced concrete frame --- reinforced concrete core tube --- progressive collapse analysis --- loss of key components --- self-healing --- damage-healing mechanics --- super healing --- anisotropic --- brittle material --- Brittle Fracture --- cell-based smoothed-finite element method (CS-FEM) --- Phase-field model --- ABAQUS UEL --- the Xulong arch dam --- yielding region --- cracking risk --- overall stability --- dam stress zones --- concrete creep --- prestressing stress --- compressive stress --- FE analysis --- force transfer --- grouting --- fracture network modeling --- numerical simulation --- fluid–structure interaction --- bulk damage --- brittle fracture --- rock fracture --- random fracture --- Mohr-Coulomb --- Discontinuous Galerkin --- EPB shield machine --- conditioned sandy pebble --- particle element model --- parameters calibration --- geometric phase --- photonic orbital angular momentum --- topological insulator --- topological photonic crystal --- fatigue crack growth --- surface crack --- crack shape change --- three-parameter model --- LEFM --- XFEM/GFEM --- SBFEM --- phase field --- n/a

Nanoelectronic Materials, Devices and Modeling

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ISBN: 9783039212255 9783039212262 Year: Pages: 242 DOI: 10.3390/books978-3-03921-226-2 Language: English
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-08-28 11:21:27
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As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

Keywords

UAV --- vision localization --- hierarchical --- landing --- information integration --- memristor --- synaptic device --- spike-timing-dependent plasticity --- neuromorphic computation --- memristive device --- ZnO films --- conditioned reflex --- quantum dot --- sample grating --- cross-gain modulation --- bistability --- distributed Bragg --- semiconductor optical amplifier --- topological insulator --- field-effect transistor --- nanostructure synthesis --- optoelectronic devices --- topological magnetoelectric effect --- drain-induced barrier lowering (DIBL) --- gate-induced drain leakage (GIDL) --- silicon on insulator (SOI) --- graphene --- supercapacitor --- energy storage --- ionic liquid --- UV irradiation --- luminescent centres --- bismuth ions --- two-photon process --- oscillatory neural networks --- pattern recognition --- higher order synchronization --- thermal coupling --- vanadium dioxide --- band-to-band tunneling --- L-shaped tunnel field-effect-transistor --- double-gate tunnel field-effect-transistor --- corner-effect --- AlGaN/GaN --- high-electron mobility transistor (HEMTs) --- p-GaN --- enhancement-mode --- 2DEG density --- InAlN/GaN heterostructure --- polarization effect --- quantum mechanical --- gallium nitride --- MISHEMT --- dielectric layer --- interface traps --- current collapse --- PECVD --- gate-induced drain leakage (GIDL) --- drain-induced barrier lowering (DIBL) --- recessed channel array transistor (RCAT) --- on-current (Ion) --- off-current (Ioff) --- subthreshold slope (SS) --- threshold voltage (VTH) --- saddle FinFET (S-FinFET) --- potential drop width (PDW) --- shallow trench isolation (STI) --- source/drain (S/D) --- conductivity --- 2D material --- Green’s function --- reflection transmision method --- variational form --- dual-switching transistor --- third harmonic tuning --- low voltage --- high efficiency --- CMOS power amplifier IC --- insulator–metal transition (IMT) --- charge injection --- Mott transition --- conductive atomic force microscopy (cAFM) --- gate field effect --- atomic layer deposition (ALD) --- zinc oxide --- silicon --- ZnO/Si --- electron affinity --- bandgap tuning --- conduction band offset --- heterojunction --- solar cells --- PC1D --- vertical field-effect transistor (VFET) --- back current blocking layer (BCBL) --- gallium nitride (GaN) --- normally off power devices --- n/a

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MDPI - Multidisciplinary Digital Publishing Institute (2)


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CC by-nc-nd (2)


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english (2)


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2019 (2)