Search results: Found 2

Listing 1 - 2 of 2
Sort by
Miniaturized Transistors

Authors: ---
ISBN: 9783039210107 / 9783039210114 Year: Pages: 202 DOI: 10.3390/books978-3-03921-011-4 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering
Added to DOAB on : 2019-06-26 08:44:06
License:

Loading...
Export citation

Choose an application

Abstract

What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.

Keywords

flux calculation --- etching simulation --- process simulation --- topography simulation --- CMOS --- field-effect transistor --- ferroelectrics --- MOS devices --- negative-capacitance --- piezoelectrics --- power consumption --- thin-film transistors (TFTs) --- compact model --- surface potential --- technology computer-aided design (TCAD) --- metal oxide semiconductor field effect transistor (MOSFET) --- topography simulation --- metal gate stack --- level set --- high-k --- fin field effect transistor (FinFET) --- line edge roughness --- metal gate granularity --- nanowire --- non-equilibrium Green’s function --- random discrete dopants --- SiGe --- variability --- band-to-band tunneling (BTBT) --- electrostatic discharge (ESD) --- tunnel field-effect transistor (TFET) --- Silicon-Germanium source/drain (SiGe S/D) --- technology computer aided design (TCAD) --- bulk NMOS devices --- radiation hardened by design (RHBD) --- total ionizing dose (TID) --- Sentaurus TCAD --- layout --- two-dimensional material --- field effect transistor --- indium selenide --- phonon scattering --- mobility --- high-? dielectric --- low-frequency noise --- silicon-on-insulator --- MOSFET --- inversion channel --- buried channel --- subthreshold bias range --- low voltage --- low energy --- theoretical model --- process simulation --- device simulation --- compact models --- process variations --- systematic variations --- statistical variations --- FinFETs --- nanowires --- nanosheets --- semi-floating gate --- synaptic transistor --- neuromorphic system --- spike-timing-dependent plasticity (STDP) --- highly miniaturized transistor structure --- low power consumption --- drain engineered --- tunnel field effect transistor (TFET) --- polarization --- ambipolar --- subthreshold --- ON-state --- doping incorporation --- plasma-aided molecular beam epitaxy (MBE) --- segregation --- silicon nanowire --- n/a

Radiation Tolerant Electronics

Author:
ISBN: 9783039212798 / 9783039212804 Year: Pages: 210 DOI: 10.3390/books978-3-03921-280-4 Language: eng
Publisher: MDPI - Multidisciplinary Digital Publishing Institute
Subject: Technology (General) --- General and Civil Engineering --- Electrical and Nuclear Engineering
Added to DOAB on : 2019-12-09 11:49:15
License:

Loading...
Export citation

Choose an application

Abstract

Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.

Keywords

physical unclonable function --- FPGA --- total ionizing dose --- Co-60 gamma radiation --- ring-oscillator --- Image processing --- line buffer --- SRAM-based FPGA --- single event upset (SEU) --- configuration memory --- soft error --- radiation-hardened --- instrumentation amplifier --- sensor readout IC --- total ionizing dose --- nuclear fusion --- radiation hardening --- hardening by design --- TMR --- selective hardening --- VHDL --- FPGA --- radiation hardening --- single event upsets --- heavy ions --- error rates --- single-event upsets (SEUs) --- digital integrated circuits --- triple modular redundancy (TMR) --- radiation hardening by design --- TMR --- FMR --- 4MR --- triplex–duplex --- FPGA-based digital controller --- radiation tolerant --- single event effects --- proton irradiation --- RFIC --- SEE testing --- space application --- CMOS --- TDC --- radiation effects --- total ionizing dose (TID) --- single-shot --- PLL --- ring oscillator --- analog single-event transient (ASET) --- bandgap voltage reference (BGR) --- CMOS analog integrated circuits --- gamma-rays --- heavy-ions --- ionization --- protons --- radiation hardening by design (RHBD) --- reference circuits --- single-event effects (SEE) --- space electronics --- total ionization dose (TID) --- voltage reference --- X-rays --- radiation-hardened --- single event gate rupture (SEGR) --- SEB --- power MOSFETs --- Single-Event Upsets (SEUs) --- radiation effects --- Ring Oscillators --- Impulse Sensitive Function --- Radiation Hardening by Design --- fault tolerance --- single event upset --- proton irradiation effects --- neutron irradiation effects --- soft errors --- saturation effect --- gain degradation --- total ionizing dose --- gamma ray --- bipolar transistor --- single event transient (SET) --- single event opset (SEU) --- radiation-hardening-by-design (RHBD) --- frequency synthesizers --- voltage controlled oscillator (VCO) --- frequency divider by two --- CMOS --- n/a

Listing 1 - 2 of 2
Sort by
Narrow your search

Publisher

MDPI - Multidisciplinary Digital Publishing Institute (2)


License

CC by-nc-nd (2)


Language

eng (2)


Year
From To Submit

2019 (2)